User:Omega/RAM
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RAM Chips
http://www.idhw.com/textual/guide/noin_ram_chip.html
Manufacturer Logo(s) on chip Serial starts with A DATA AD Alliance Semiconductor AS Alps 3DA Apacer AM Ascend AD ATOP AT Buffalo Crucial CT Cypress CY Elite MT M or LP elixir N2D Elpida DK ESMT M Etron Technology EM eX ITC Fujitsu MB Galvantech GVT GeIL GL or 6L G-Link Technology GCT Hitachi HM5 HMC HM Hyundai (Hynix) HY IBM IBM IDT (Integrated Device Tech) IDT Infineon HYB intel ISSI J.tec JB KingMax KDL LD PC LGS (Lucky Goldstar) GM or SDS M-PLUS ISD M.tec TB Micron Technology MT Mira P2 Mitsubishi M5M Mosel Vitelic V MoSys M Motorola MCM or SCM Mr. STONE ITC Nanya NT NCP NP ND ND NEC µPD Oki MSM Panasonic MN Paradigm PDM PQI PQI PMI HP Renesas R1 SBT SB SEC (Samsung Semiconductor) K4 or KM Semicon SEMICON SD Siemens HYB Silicon Magic SM Sony South Land Micro (SMT) - SpecTek - Texas Instruments TMS TICE M53 tmTECH T35 Tonicom TM Toshiba TC5 Transcend TwinMOS TM UMC UM UNIC UC V-Data VD Vanguard VG ViGOUR VC Winbond W WMX WX Xelo IM
Micron
*MT4C4007J-6 *MT63V32128Q-5 9842A *MT 48LC2M8A1 TG -8B S 9810 C USA *MT 46V8M8 TG -8 B 0036 1-1 *MT MOSEL MT51SD16100T-7 0120 TR *4AB11 Z9CJF 7HT7 ------------------------ MT / MOSEL, MT - Micron Technology *4 - RAM type: 28 - Flash (dual supply) 4 - DRAM 41 - SGRAM 46 - SDRAM DDR 48 - SDRAM sync 4A - SDRAM DDR-2 57 - DRAM DDR sync 58 - SRAM sync burst 59 - SRAM sync lastwrite 63 - ? *V - Voltage: V - 2.5V L - 3.3V [blank] - 5.0V *C - Manufacturing process: C - CMOS B - BiCMOS *16 - bit organization: 1M16 - 1MBit x 16 2M8 - 2MBit x 8 4M4 - 4MBit x 4 8M8 - 8MBit x 8 16M8 - 16MBit x 8 64K18 - 64kBit x 18 64K36 - 64kBit x 36 32K36 - 32kBit x 36 1004 - 4MBit x 1, FP 4001 - 1MBit x 4, FP 4007 - 1MBit x 4 , EDO, 1K refresh 16270 - 256kBit x 16, EDO 16257 - 256kBit x 16, FP 32128 - 128kBit x 32 *2 - Refresh: E5 - 1K refresh - EDO E7 - 2K refresh - EDO E8 - 2K refresh - EDO E9 - 4K refresh - EDO A1 - 4K refresh - Fast Page A2 - tWR = 2 clk B1 - 2K refresh - Fast Page B2 - 3.3 & 5.0 Volt signals B3 - 3.3 Volt signals only C3 - 1K refresh - Fast Page *J - Package option: J - SOJ Q - QFP TG - 54pin TSOP II FB - 60pin FBGA (8mm x 16mm) FC - 60pin FBGA (11mm x 13mm) *6 - min cycle time: 5 - 50ns 6 - 60ns 7 - 70ns 75 - 7.5ns @CL=3 (PC133) 7E - 7.5ns @ CL=2 (PC133) 8E - 10.0ns @CL=2 (PC100) 10 - 10ns *C - die revision: A/B/C ... *9812 - date of manufacture: 98 - year of manufacture 12 - week of manufacture *7HT7 - Serialization code
Hyundai / SK hynix
- Hyundai Electronics http://www.hea.com
- Merged with Lucky Goldstar Semi [LGS] 1999
- Renamed to Hynix Semiconductors - SK hynix
*HY57V161610D TC-7 9909A KOREA *hynix 134A HY5DV641622AT-36 KOREA *HY57V56420BT *HY534256AJ-70 *HY51V42260-60 9705A KOREA ------------------- *HY HY - Hyundai / hynix *57 - RAM type: 51 - DRAM 53 - DRAM (EDO ?) 57 - SDRAM 5D - SDRAM DDR 62 - SRAM slow / superslow 63 - SRAM fast 64 - SRAM pseudo *V - Voltage: [blank] - 5.0V V - 3.3V Y - 3.0V U - 2.5V W - 2.5V (VDDQ=1.8V) VL - 2.35V S - 1.8V *S - Refresh: S - self refresh [none] - standard *16 - Memory density: 3C - 256KBit 31 - 1MBit 34 - 1MBit 4 - 4MBit, 1k refresh 41 - 4MBit 42 - 4MBit 16 - 16M, 4k refresh 17 - 16M, 2k refresh 18 - 16M, 1k refresh 32 - 32M, 4k refresh 64 - 64M, 8k refresh 65 - 64M, 4k refresh 129 - 128M, 4k refresh 28 - 128M, 4k refresh 2A - 128M, 4k refresh TCSR 257 - 256M, 8k refresh 56 - 256M, 8k refresh 12 - 512M, 8k refresh *16 - bit organization: 40 - x4 41 - x4 (4CAS) 80 - x8 16 - x16 17 - x16 (2CAS) 18 - x16 (2WE) 32 - x32 (2CAS) 33 - x32 (2WE) 34 - x32 (4CAS) *L - Bank / Interface: 1 - 2 banks 2 - 4 banks 0 - LVTTL 1 - SSTL 2 - SSTL2 5 - RAM type: 0 - FastPage 3 - EDO 4 - EDO 5 - EDO *C - die revision Fab. Ichon: [blank] / A / B / C / D ... Fab. Cheong-ju: H / HA / HB / HC / HD ... *J - Package option: J - SOJ T - TSOP-II TC - TSOP-II 400mil TQ - TQFP 100pin R - TSOP reverse S - stack package (Hynix) K - stack package (M&T) J - stack package (others) *7 - min cycle time: 50 - 50ns 60 - 60ns 70 - 70ns 15 - 15ns (66MHz) 12 - 12ns (83MHz) 10 - 10ns (100MHz) 10s - 10ns (100MHz CL3) 10p - 10ns (100MHz CL2&3) 8 - 8ns (125MHz) 75 - 7.5ns (133MHz) 7 - 7ns (143MHz) 6 - 6ns (166MHz) 55 - 5.5ns (183MHz) 5 - 5ns (200MHz) *A - RAS/CAS: [none] - PC66 [2-2-2] A - PC100 [3-2-3] B - PC100 [2-2-2] C - PC100 [2-2-2] D - PC100 [2-2-2] *9909 - date of manufacture: 99 - year of manufacture 09 - week of manufacture *134A - Serialization code
